Key Specifications
Choose one or multiple features to search for items that have the same specifications.| Technical details | |
| Device type | SSD |
| Weight & dimensions | |
| Weight | 8 g |
| Height | 2.23 mm |
| Width | 22 mm |
| Depth | 80 mm |
| Energy management | |
| Operating voltage | 3.3 V |
| Operational conditions | |
| Operating temperature (T-T) | 0 - 70 °C |
| Maximum operating temperature | 70 °C |
| Minimum operating temperature | 0 °C |
| Other features | |
| Sequential writing speed | 1400 MB/s |
| Sequential reading | 1700 MB/s |
| SSD endurance rating | 400 TBW |
| Compliance certificates | CE |
| Features | |
| Drive capacity | 1 TB |
| Interface | PCI Express 3.0 |
| Certification | FCC, BSMI, KC, RCM |
| Mean time between failures (MTBF) | 2000000 h |
| Memory type | 3D NAND |
| Data transfer rate | 32 Gbit/s |
| ECC | ![]() |
| Read speed | 1700 MB/s |
| Write speed | 1400 MB/s |
| Hot-Plug support | ![]() |
| S.M.A.R.T. support | ![]() |
| Windows operating systems supported | Windows 10, Windows 7, Windows 8 |
| Linux operating systems supported | Kernel 2.6.31, Kernel 2.6.33, Kernel 3.12, Kernel 3.3, Kernel 4.6.4 |
| TRIM support | ![]() |
| Random write (4KB) | 140000 IOPS |
| Random read (4KB) | 160000 IOPS |
| Component for | PC |
| Enhanced Power Loss Data Protection technology | ![]() |
| Random write (100% span) | 250000 IOPS |
| Hardware encryption | ![]() |
| SSD temperature monitoring | ![]() |
| PCI Express interface data lanes | x4 |
| End-to-End Data Protection | ![]() |
| TBW rating | 400 |
| SSD form factor | M.2 |
| NVMe | ![]() |
| NVMe version | 1.3 |
| DevSlp (device sleep) support | ![]() |
| Temperature monitoring and logging | ![]() |
| Logistics data | |
| Harmonized System (HS) code | 84717070 |
| EAN | 0760557850229 |
| Warranty | 1 year |
The Transcend MTE112S is an internal solid-state drive engineered in the M.2 2280 form factor. It utilizes the PCIe Generation 3 x4 interface, adhering to the NVMe 1.3 protocol for reduced latency data transfer. This configuration results in sequential data handling capabilities up to 1700 MB/s for reading operations and 1400 MB/s for writing operations. These performance levels establish the drive as suitable for accelerating system responsiveness in workstations and gaming desktops.
This model is constructed with 3D NAND Flash technology, which contributes to reliability and power efficiency. The drive is rated for an endurance of 400 TBW (Terabytes Written), providing ample longevity for prolonged intensive use cases. Its extremely low weight of 8g and compact physical dimensions allow for straightforward integration into small form factor (SFF) builds and thin portable computing systems. Features like ECC (Error Correction Code) and internal temperature monitoring work to maintain data integrity under sustained operational load.
Key Features:- Device type: Internal Solid State Drive
- Capacity: 1000 GB (1TB)
- Interface: NVMe PCIe Gen3 x4
- Form factor: M.2 2280
- Sequential read speed: 1700 MB/s
- Sequential write speed: 1400 MB/s
- Mean Time Between Failures (MTBF): 2,000,000 hours
- NAND Flash: 3D NAND Flash technology
- Support for S.M.A.R.T. and TRIM functions
- Dimensions: 80 mm depth by 22 mm width
Estimated delivery: 15.12 - 17.12
Today: 10:00 - 18:00
Estimated delivery: 15.12 - 17.12
Today: 09:00 - 17:00
Estimated delivery: 15.12 - 17.12
Today: 10:00 - 17:00
Estimated delivery: 15.12 - 17.12
Today: 10:00 - 18:00
Estimated delivery: 15.12 - 17.12
Today: 10:00 - 17:00
Estimated delivery time: 15.12 - 17.12
Estimated delivery time: 16.12 - 17.12
Estimated delivery time: 15.12 - 16.12
Estimated delivery time: 16.12 - 17.12
Estimated delivery time: 16.12
Estimated delivery time: 15.12 - 17.12
Estimated delivery time: 15.12 - 17.12
Estimated delivery time: 16.12
- leaflet (English)


