Key Specifications
Choose one or multiple features to search for items that have the same specifications.| Technical details | |
| Device type | SSD |
| Weight & dimensions | |
| Weight | 8 g |
| Height | 3.58 mm |
| Width | 22 mm |
| Depth | 80 mm |
| Energy management | |
| Operating voltage | 3.3 V |
| Power consumption (idle) | 0.005 W |
| Power consumption (max) | 2 W |
| Power consumption (average) | 0.5 W |
| Operational conditions | |
| Operating temperature (T-T) | 0 - 70 °C |
| Operating shock | 1500 G |
| Non-operating shock | 1500 G |
| Non-operating vibration | 20 G |
| Operating vibration | 20 G |
| Other features | |
| Sequential writing speed | 900 MB/s |
| Sequential reading | 1700 MB/s |
| Features | |
| Drive capacity | 512 GB |
| Interface | PCI Express 3.0 |
| Certification | CE/FCC/BSMI/KC/RCM |
| Mean time between failures (MTBF) | 2000000 h |
| Memory type | 3D NAND |
| Data transfer rate | 32 Gbit/s |
| ECC | ![]() |
| Read speed | 1700 MB/s |
| Write speed | 900 MB/s |
| Hot-Plug support | ![]() |
| S.M.A.R.T. support | ![]() |
| Windows operating systems supported | Windows 10, Windows 7, Windows 8 |
| Mac operating systems supported | ![]() |
| Linux operating systems supported | Kernel 2.6.31 |
| TRIM support | ![]() |
| Random write (4KB) | 140000 IOPS |
| Random read (4KB) | 160000 IOPS |
| Component for | PC/Laptop |
| Lithography | 15 nm |
| Read latency | 90 µs |
| Write latency | 100 µs |
| Enhanced Power Loss Data Protection technology | ![]() |
| Random write (100% span) | 250000 IOPS |
| Hardware encryption | ![]() |
| SSD temperature monitoring | ![]() |
| PCI Express interface data lanes | x4 |
| End-to-End Data Protection | ![]() |
| TBW rating | 200 |
| SSD form factor | M.2 |
| NVMe | ![]() |
| NVMe version | 1.3 |
| Low-density parity-check (LDPC) | ![]() |
| Sequential read speed (ATTO) | 1700 MB/s |
| Sequential write speed (ATTO) | 1400 MB/s |
| DevSlp (device sleep) support | ![]() |
| Temperature monitoring and logging | ![]() |
| Logistics data | |
| Harmonized System (HS) code | 84717070 |
| EAN | 0760557841708 |
| Warranty | 1 year |
The Transcend 110S is an internal solid-state drive utilizing the compact M.2 2280 form factor. It operates over the PCIe Gen3 x4 interface, adhering to the NVMe 1.3 specification for efficient bandwidth utilization. This architecture supports high-speed data transfer necessary for intensive computing tasks, including advanced digital media production and high-demand gaming workloads. Sequential performance ratings for the 512 GB model reach up to 1700 MB/s read and 900 MB/s write speeds.
The drive is constructed using 3D TLC NAND flash memory, designed to maximize storage density and long-term durability. Reliability is quantified by an endurance rating of 200 TBW and a Mean Time Between Failures (MTBF) of 2 million hours. Its physical dimensions allow for installation in thin-profile notebooks and desktop motherboards equipped with the appropriate M.2 slot. The 110S integrates support for essential management protocols, including SMART monitoring and TRIM functionality.
Key Features:- 512 GB storage capacity
- M.2 2280 form factor
- PCIe Gen3 x4 interface
- Utilizes NVMe 1.3 protocol
- 1700 MB/s sequential read speed
- 900 MB/s sequential write speed
- Built with 3D TLC NAND flash
- Rated for 200 TBW endurance
- Two million hours MTBF rating
- Supports SMART and TRIM functionality
- Includes End-to-end data protection
Estimated delivery: 15.12
Today: 10:00 - 18:00
Estimated delivery: 15.12
Today: 09:00 - 17:00
Estimated delivery: 15.12
Today: 10:00 - 17:00
Estimated delivery: 15.12
Today: 10:00 - 18:00
Estimated delivery: 15.12
Today: 10:00 - 17:00
Estimated delivery time: 15.12
Estimated delivery time: 16.12
Estimated delivery time: 15.12
Estimated delivery time: 16.12
Estimated delivery time: 16.12
Estimated delivery time: 15.12
Estimated delivery time: 15.12
Estimated delivery time: 16.12
- leaflet (English)


